? 2010 ixys corporation, all rights reserved xpt tm 600v genx3 tm IXXH100N60B3 v ces = 600v i c110 = 100a v ce(sat) 1.80v t fi(typ) = 150ns symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 210 a i lrms terminal current limit 160 a i c110 t c = 110c 100 a i cm t c = 25c, 1ms 400 a i a t c = 25c 50 a e as t c = 25c 600 mj ssoa v ge = 15v, t vj = 150c, r g = 2 i cm = 200 a (rbsoa) clamped inductive load @ v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 10 , non repetitive p c t c = 25c 830 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g ds100284(12/10) extreme light punch through igbt for 10-30 khz switching symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 2 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 70a, v ge = 15v, note 1 1.50 1.80 v t j = 150 c 1.77 v features z optimized for 10-30khz switching z square rbsoa z avalanche rated z short circuit capability z high current handling capability z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts g = gate c = collector e = emitter tab = collector to-247 ad g c e tab advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXXH100N60B3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a , v ce = 10v, note 1 22 40 s c ie s 4860 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 285 pf c res 83 pf q g 143 nc q ge i c = 70a , v ge = 15v, v ce = 0.5 ? v ces 37 nc q gc 60 nc t d(on) 30 ns t ri 70 ns e on 1.9 mj t d(off) 120 ns t fi 150 ns e of f 2.0 2.8 mj t d(on) 32 ns t ri 60 ns e on 2.3 mj t d(off) 150 ns t fi 200 ns e off 2.8 mj r thjc 0.18 c/w r thcs 0.21 c/w notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 70a, v ge = 15v v ce = 360v, r g = 2 note 2 inductive load, t j = 25c i c = 70a, v ge = 15v v ce = 360v, r g = 2 note 2 e ? p to-247 (ixxh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2010 ixys corporation, all rights reserved IXXH100N60B3 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 9v 11v 7v 6v 8v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 10v 11v 13v 12v 8v 7v 9v 14v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 8v 9v 7v 5v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 70a i c = 35a i c = 140a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 140 a t j = 25oc 70 a 35 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH100N60B3 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 300v i c = 70a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limit dc 100s external lead limit
? 2010 ixys corporation, all rights reserved IXXH100N60B3 fig. 13. inductive switching energy loss vs. gate resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 23456789101112131415 r g - ohms e off - millijoules 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 360v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 100 140 180 220 260 300 340 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f i - nanoseconds 100 140 180 220 260 300 340 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 0 1 2 3 4 5 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 360v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 50 100 150 200 250 300 350 400 20 30 40 50 60 70 80 90 100 i c - amperes t f i - nanoseconds 40 80 120 160 200 240 280 320 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 100 120 140 160 180 200 220 240 260 280 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 60 80 100 120 140 160 180 200 220 240 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 360v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH100N60B3 ixys ref: ixx_100n60b3(7d)9-30-10-a fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 20 30 40 50 60 70 80 90 100 i c - amperes t r i - nanoseconds 24 26 28 30 32 34 36 38 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 360v t j = 150oc, 25oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 28 29 30 31 32 33 34 35 36 37 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 360v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 23456789101112131415 r g - ohms t r i - nanoseconds 20 28 36 44 52 60 68 76 84 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 50a i c = 100a
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